Comparison of direct numerical procedure and Monte Carlo technique to determine the charging effects in submicron structures

Z. Lj Petrović, S. Sakadžić, N. Spasojević, J. Matsui, T. Makabe

研究成果: Conference article査読

6 被引用数 (Scopus)

抄録

Charging was found to be the cause of the largest number of defects in integrated circuits produced by plasma etching for high aspect ratio submicron structures (200 nm resolutions and smaller). Further improvement of the existing plasma processing tools requires accurate representation of charging and modeling of the development of etched profiles. In this paper we compare the results of fluxes of ions in micro trenches as a benchmark to verify the simpler and faster Direct Numerical Procedure that was used to model the plasma surface interface in more complex comprehensive codes. A reasonably good agreement is achieved except that numerical diffusion reduces the angular and spatial structures, which actually may be pronounced. Angular and energy dependences of incoming ions are also studied.

本文言語English
ページ(範囲)9-14
ページ数6
ジャーナルMaterials Science Forum
453-454
DOI
出版ステータスPublished - 2004
イベントProgress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V - Herceg Novi
継続期間: 2003 9月 152003 9月 19

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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