Comprehensive study on injection velocity enhancement in dopant-segregated schottky MOSFETs

A. Kinoshita, T. Kinoshita, Y. Nishi, K. Uchida, S. Toriyama, R. Hasumi, J. Koga

    研究成果: Conference contribution

    17 被引用数 (Scopus)

    抄録

    The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, vinj. It was found that vinj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study.

    本文言語English
    ホスト出版物のタイトル2006 International Electron Devices Meeting Technical Digest, IEDM
    DOI
    出版ステータスPublished - 2006 12月 1
    イベント2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
    継続期間: 2006 12月 102006 12月 13

    出版物シリーズ

    名前Technical Digest - International Electron Devices Meeting, IEDM
    ISSN(印刷版)0163-1918

    Other

    Other2006 International Electron Devices Meeting, IEDM
    国/地域United States
    CitySan Francisco, CA
    Period06/12/1006/12/13

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

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