Conductivity Phase Transition with Shift of Valence-Band Edge and with Structural Distortion in Cu4Sn1-xGexS4

Takayuki Kamimura, Masanori Matoba, Shuichiro Anzai

研究成果: Article査読

5 被引用数 (Scopus)

抄録

X-ray diffraction, electrical resistivity, DSC and XPS investigations were carried out on Cu4Sn1-xGexS4 (0≦x≦1.0). At room temperature, the orthorhombic structure changes to a monoclinic one at a transition concentration of xt=0.6 as x increases. This transition also exhibits the expansions in the energy width between the top of the valence band and the Fermi level and in the lattice parameter B. The transition has the characteristics of the first-order high (high temperature)-to-low (low temperature) conductivity phase transition as reported on Cu4SnS4. The transition temperature Tt linearly increases with x. These features are briefly compared with the electronic and structural phase transition reported on SnTe and Pb1-xGexTe.

本文言語English
ページ(範囲)3045-3048
ページ数4
ジャーナルJournal of the Physical Society of Japan
59
9
DOI
出版ステータスPublished - 1990 1月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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