Conductivity Phase Transition with Shift of Valence-Band Edge and with Structural Distortion in Cu4Sn1-xGexS4

Takayuki Kamimura, Masanori Matoba, Shuichiro Anzai

研究成果: Article

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X-ray diffraction, electrical resistivity, DSC and XPS investigations were carried out on Cu4Sn1-xGexS4 (0≦x≦1.0). At room temperature, the orthorhombic structure changes to a monoclinic one at a transition concentration of xt=0.6 as x increases. This transition also exhibits the expansions in the energy width between the top of the valence band and the Fermi level and in the lattice parameter B. The transition has the characteristics of the first-order high (high temperature)-to-low (low temperature) conductivity phase transition as reported on Cu4SnS4. The transition temperature Tt linearly increases with x. These features are briefly compared with the electronic and structural phase transition reported on SnTe and Pb1-xGexTe.

元の言語English
ページ(範囲)3045-3048
ページ数4
ジャーナルJournal of the Physical Society of Japan
59
発行部数9
DOI
出版物ステータスPublished - 1990 1 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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