Conical potential model for InGaAs/GaAs quantum dots formed in tetrahedral-shaped recesses

Akira Endoh, Yoshiki Sakuma, Motomu Takatsu, Yuji Awano, Naoki Yokoyama

研究成果: Article査読

抄録

We developed a conical potential model for InGaAs/GaAs quantum dots formed in tetrahedral-shaped recesses (TSRs) and evaluated the diameter and average indium (In) content of TSR quantum dots by combining with magnetophotoluminescence (PL) measurements. The model calculations of the PL peak energy and its diamagnetic shift of TSR quantum dots were performed using the effective mass approximation method. We found that the diameter and the ratio of average In content of a TSR quantum dot to that of the surrounding quantum well are independent of the flow rate of trimethylindium, which is the source gas of In, in the range of our experiments. The negative diamagnetic shift of the PL peak from the first excited state transition, which was observed for the "In-rich" sample, could be explained by the contributions of two different energy levels with a different angular momentum.

本文言語English
ページ(範囲)4745-4748
ページ数4
ジャーナルJournal of Applied Physics
88
8
DOI
出版ステータスPublished - 2000 10月
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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