Control of charging in high aspect ratio plasma etching of integrated circuits

Z. L. Petrovic, T. Makabe

研究成果: Conference contribution

抄録

In this paper we discuss some recent studies on control of charging during plasma etching of silicon dioxide in integrated circuits. These are required to reduce the damage on the devices and allow further increase in speed and capacity of integrated circuits. Such possibilities have a bearing in development of telecommunications. In particular we discuss how properties of incoming ions, geometry of the nanostructure, aspect ratio and plasma properties affect the kinetics of charging.

本文言語English
ホスト出版物のタイトル6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings
出版社IEEE Computer Society
ページ119-126
ページ数8
ISBN(印刷版)0780379632, 9780780379633
DOI
出版ステータスPublished - 2003 1 1
イベント6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Nis, Serbia
継続期間: 2003 10 12003 10 3

出版物シリーズ

名前6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings
1

Other

Other6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003
国/地域Serbia
CityNis
Period03/10/103/10/3

ASJC Scopus subject areas

  • コンピュータ ネットワークおよび通信

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