Control of charging in high aspect ratio plasma etching of integrated circuits

Z. L. Petrovic, T. Makabe

研究成果: Conference contribution

抄録

In this paper we discuss some recent studies on control of charging during plasma etching of silicon dioxide in integrated circuits. These are required to reduce the damage on the devices and allow further increase in speed and capacity of integrated circuits. Such possibilities have a bearing in development of telecommunications. In particular we discuss how properties of incoming ions, geometry of the nanostructure, aspect ratio and plasma properties affect the kinetics of charging.

元の言語English
ホスト出版物のタイトル6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings
出版者IEEE Computer Society
ページ119-126
ページ数8
1
ISBN(印刷物)0780379632, 9780780379633
DOI
出版物ステータスPublished - 2003
イベント6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Nis, Serbia
継続期間: 2003 10 12003 10 3

Other

Other6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003
Serbia
Nis
期間03/10/103/10/3

Fingerprint

Plasma etching
Integrated circuits
Aspect ratio
Bearings (structural)
Telecommunication
Nanostructures
Silica
Plasmas
Kinetics
Geometry
Ions

ASJC Scopus subject areas

  • Computer Networks and Communications

これを引用

Petrovic, Z. L., & Makabe, T. (2003). Control of charging in high aspect ratio plasma etching of integrated circuits. : 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings (巻 1, pp. 119-126). [1246198] IEEE Computer Society. https://doi.org/10.1109/TELSKS.2003.1246198

Control of charging in high aspect ratio plasma etching of integrated circuits. / Petrovic, Z. L.; Makabe, T.

6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings. 巻 1 IEEE Computer Society, 2003. p. 119-126 1246198.

研究成果: Conference contribution

Petrovic, ZL & Makabe, T 2003, Control of charging in high aspect ratio plasma etching of integrated circuits. : 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings. 巻. 1, 1246198, IEEE Computer Society, pp. 119-126, 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003, Nis, Serbia, 03/10/1. https://doi.org/10.1109/TELSKS.2003.1246198
Petrovic ZL, Makabe T. Control of charging in high aspect ratio plasma etching of integrated circuits. : 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings. 巻 1. IEEE Computer Society. 2003. p. 119-126. 1246198 https://doi.org/10.1109/TELSKS.2003.1246198
Petrovic, Z. L. ; Makabe, T. / Control of charging in high aspect ratio plasma etching of integrated circuits. 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings. 巻 1 IEEE Computer Society, 2003. pp. 119-126
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