Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K

Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, Shunri Oda

    研究成果: Article査読

    25 被引用数 (Scopus)

    抄録

    We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices.

    本文言語English
    論文番号095002
    ジャーナルApplied Physics Express
    2
    9
    DOI
    出版ステータスPublished - 2009 9

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

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