抄録
A sub-10nm, high-density, periodic silicon-nanodisc (Si-ND) array has been fabricated using a new top-down process, which involves a 2D array bio-template etching mask made of Listeria-Dps with a 4.5nm diameter iron oxide core and damage-free neutral-beam etching (Si-ND diameter: 6.4nm). An Si-ND array with an SiO 2 matrix demonstrated more controllable optical bandgap energy due to the fine tunability of the Si-ND thickness and diameter. Unlike the case of shrinking Si-ND thickness, the case of shrinking Si-ND diameter simultaneously increased the optical absorption coefficient and the optical bandgap energy. The optical absorption coefficient became higher due to the decrease in the center-to-center distance of NDs to enhance wavefunction coupling. This means that our 6nm diameter Si-ND structure can satisfy the strict requirements of optical bandgap energy control and high absorption coefficient for achieving realistic Si quantum dot solar cells.
本文言語 | English |
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論文番号 | 065302 |
ジャーナル | Nanotechnology |
巻 | 23 |
号 | 6 |
DOI | |
出版ステータス | Published - 2012 2月 17 |
ASJC Scopus subject areas
- バイオエンジニアリング
- 化学 (全般)
- 材料科学(全般)
- 材料力学
- 機械工学
- 電子工学および電気工学