Control of optical bandgap energy and optical absorption coefficient by geometric parameters in sub-10nm silicon-nanodisc array structure

Mohd Fairuz Budiman, Weiguo Hu, Makoto Igarashi, Rikako Tsukamoto, Taiga Isoda, Kohei M. Itoh, Ichiro Yamashita, Akihiro Murayama, Yoshitaka Okada, Seiji Samukawa

研究成果: Article査読

34 被引用数 (Scopus)

抄録

A sub-10nm, high-density, periodic silicon-nanodisc (Si-ND) array has been fabricated using a new top-down process, which involves a 2D array bio-template etching mask made of Listeria-Dps with a 4.5nm diameter iron oxide core and damage-free neutral-beam etching (Si-ND diameter: 6.4nm). An Si-ND array with an SiO 2 matrix demonstrated more controllable optical bandgap energy due to the fine tunability of the Si-ND thickness and diameter. Unlike the case of shrinking Si-ND thickness, the case of shrinking Si-ND diameter simultaneously increased the optical absorption coefficient and the optical bandgap energy. The optical absorption coefficient became higher due to the decrease in the center-to-center distance of NDs to enhance wavefunction coupling. This means that our 6nm diameter Si-ND structure can satisfy the strict requirements of optical bandgap energy control and high absorption coefficient for achieving realistic Si quantum dot solar cells.

本文言語English
論文番号065302
ジャーナルNanotechnology
23
6
DOI
出版ステータスPublished - 2012 2 17

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 化学 (全般)
  • 材料科学(全般)
  • 材料力学
  • 機械工学
  • 電子工学および電気工学

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