Controlling of spin orientation in a pseudo-spin valve MRAM cell with pulsed conductor currents

J. Kikuchi, S. Akiyoshi, H. Terada, Y. Nozaki, K. Matsuyama

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Reversal of spin orientation using current-carrying conductors are studied for a micro-structured pseudo-spin valve material of Co79Fe 21(3 nm)/Cu(4nm)/Co73Fe27(4nm) by magnetoresistive measurements. Selective spin reorientation in one of the two magnetic layers are successfully performed with practical current amplitude smaller than 10mA/μm. Compositionally differentiated coercive field in the CoFe films would be a dominant cause for the selectivity of the spin reorientation.

本文言語English
ページ(範囲)1895-1897
ページ数3
ジャーナルJournal of Magnetism and Magnetic Materials
272-276
III
DOI
出版ステータスPublished - 2004 5
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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