Correlated to random transition of ionized impurity distribution in n-type Ge: (As, Ga)

Jiro Kato, Kohei M. Itoh, Eugene E. Haller

研究成果: Article査読

抄録

We discuss the broadening of ground-state to bounded excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible, a unique determination of the ionized impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized impurity distribution as a function of the ionized impurity concentration and of temperature.

本文言語English
ページ(範囲)521-524
ページ数4
ジャーナルPhysica B: Condensed Matter
308-310
DOI
出版ステータスPublished - 2001 12月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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