Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

A. R. Stegner, H. Tezuka, H. Riemann, N. V. Abrosimov, P. Becker, H. J. Pohl, M. L.W. Thewalt, K. M. Itoh, M. S. Brandt

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered 28Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δm = 1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2 × 1015 cm-3. When the impurity level is decreased further, the linewidth does not fall below 2.3 ± 0.2 mT, for which we discuss possible origins.

本文言語English
論文番号032101
ジャーナルApplied Physics Letters
99
3
DOI
出版ステータスPublished - 2011 7 18

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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