Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate

H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, T. Ikoma

研究成果: Article査読

185 被引用数 (Scopus)

抄録

We have developed a very controllable fabrication process of an extremely narrow (∼10 nm) quantum wire metal-oxide-semiconductor field-effect transistor (MOSFET) on a separation-by-implanted-oxygen (SIMOX) substrate using anisotropic etching and selective oxidation technique. The drain current versus gate voltage characteristics show oscillations caused by Coulomb blockade even at room temperature. The oscillations split into several sharp peaks when the temperature is decreased, indicating that the channel is separated by several serial coupled quantum dots and that the quantum levels of these dots correspond to the observed fine peaks.

本文言語English
ページ(範囲)3585-3587
ページ数3
ジャーナルApplied Physics Letters
68
25
DOI
出版ステータスPublished - 1996
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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