Crystal structures of BaMgF4-xOxn thin films

Xiaoli Wang, Shinobu Fujihara, Toshio Kimura, Haydn Chen

研究成果: Conference article

5 引用 (Scopus)

抜粋

A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified.

元の言語English
ページ(範囲)121-126
ページ数6
ジャーナルFerroelectrics
264
発行部数1
DOI
出版物ステータスPublished - 2001 12 1
イベント3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China
継続期間: 2000 12 122000 12 15

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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