C60 nanowhisker field-effect-transistor application for nano-electronics

Ken Ichi Ogawa, Nobuyuki Aoki, Kun'ichi Miyazawa, Shigeo Nakamura, Tadahiko Mashino, Jonathan P. Bird, Yuichi Ochiai

研究成果: Article

9 引用 (Scopus)

抜粋

Various kinds of field-effect transistor (FET) have been fabricated with C60 nanowhisker (NW) and also studied for nanoelectronics application. Especially, pure and solvated C60 NWs have been synthesized in N2 environment so as to clarify the best device performance of C60 NW-FET. The FET works not only under vacuum but also in N2 environment when kept in the solvated condition. The solvated C60 NW-FET shows a clear improvement of their on/off ratio in the solvated condition, and the highest electron mobility after annealing. Although further study is needed, our results demonstrate the possibility, by appropriate choice of the solvent, of achieving good improvements in FET performance. Moreover, new kinds of C60 NW, such as derivative-based and nanotube-type one, have also been studied with regards to their fundamental FET characteristics.

元の言語English
ページ(範囲)501-504
ページ数4
ジャーナルJapanese journal of applied physics
47
発行部数1 PART 2
DOI
出版物ステータスPublished - 2008 1 22

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • これを引用

    Ogawa, K. I., Aoki, N., Miyazawa, K., Nakamura, S., Mashino, T., Bird, J. P., & Ochiai, Y. (2008). C60 nanowhisker field-effect-transistor application for nano-electronics. Japanese journal of applied physics, 47(1 PART 2), 501-504. https://doi.org/10.1143/JJAP.47.501