Current-driven phase-change optical gate switch using indium-tin-oxide heater

Kentaro Kato, Masashi Kuwahara, Hitoshi Kawashima, Tohru Tsuruoka, Hiroyuki Tsuda

研究成果: Article査読

89 被引用数 (Scopus)

抄録

We proposed and fabricated a current-driven phase-change optical gate switch using a Ge2Sb2Te 5 (GST225) thin film, an indium-tin-oxide (ITO) heater, and a Si waveguide. Microfabrication technology compatible with CMOS fabrication was used for the fabrication of the Si waveguide. The repetitive phase changing of GST225 was obtained by injecting a current pulse into the ITO heater beneath the GST225 thin film. The switching operation was observed by injecting a 100-ns current pulse of 20 mA into the ITO heater. The average extinction ratio over the wavelength range of 1,525 to 1,625nm was 1.2 dB.

本文言語English
論文番号072201
ジャーナルApplied Physics Express
10
7
DOI
出版ステータスPublished - 2017 7月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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