Current-injection lasing in T-shaped GaAs/AlGaAs quantum-wire lasers

Shu Man Liu, Masahiro Yoshita, Makoto Okano, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

研究成果: Conference contribution

抄録

Current-injection T-shaped GaAs/AlGaAs quantum wires lasers have been fabricated by a cleaved-edge overgrowth method with molecular beam epitaxy. Continuous single-mode operation at photon energy of ∼1.5 eV has been demonstrated between 30 K up to 70 K from laser diodes with high-reflectivity coating on both cleaved facets. The lowest threshold current (Ith) of 0.27 mA has been achieved at 30K, which are attributed to the high quality of the 2D confined structure and hence very low internal losses of the optical cavities.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
ページ861-862
ページ数2
DOI
出版ステータスPublished - 2007
外部発表はい
イベント28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
継続期間: 2006 7 242006 7 28

出版物シリーズ

名前AIP Conference Proceedings
893
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
国/地域Austria
CityVienna
Period06/7/2406/7/28

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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