Current status of heteroepitaxy of CVD diamond

T. Suzuki, A. Argoitia

研究成果: Article査読

18 被引用数 (Scopus)


Epitaxial growth of chemical vapor deposited (CVD) diamond on non-diamond substrates such as c-BN, SiC, BeO, Cu, Ni, and graphite has been the subject of intense effort. It has been confirmed that diamond can be grown epitaxially, ou c-BN single crystals, especially on the boron-terminated surfaces. However, the limitation of the small size of c-BN particles has prevented further development for practical purposes. Recently, highly oriented particles and films have been observed on the {100} planes of β-SiC substrates by the bias-enhanced microwave method. Further, the 〈111〉-oriented particles have been also reported on the {0001} surface of α-SiC which is equivalent in surface structure to the {111} surface of β-SiC. The 〈111〉-oriented particles have been also observed on the {0001} planes of BeO and highly oriented pyrolytic graphite. In this paper, the current status of heteroepitaxy of CVD diamond is summarized and discussed based on crystallographic considerations.

ジャーナルPhysica Status Solidi (A) Applied Research
出版ステータスPublished - 1996 3月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学


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