TY - JOUR
T1 - Current status of heteroepitaxy of CVD diamond
AU - Suzuki, T.
AU - Argoitia, A.
PY - 1996/3
Y1 - 1996/3
N2 - Epitaxial growth of chemical vapor deposited (CVD) diamond on non-diamond substrates such as c-BN, SiC, BeO, Cu, Ni, and graphite has been the subject of intense effort. It has been confirmed that diamond can be grown epitaxially, ou c-BN single crystals, especially on the boron-terminated surfaces. However, the limitation of the small size of c-BN particles has prevented further development for practical purposes. Recently, highly oriented particles and films have been observed on the {100} planes of β-SiC substrates by the bias-enhanced microwave method. Further, the 〈111〉-oriented particles have been also reported on the {0001} surface of α-SiC which is equivalent in surface structure to the {111} surface of β-SiC. The 〈111〉-oriented particles have been also observed on the {0001} planes of BeO and highly oriented pyrolytic graphite. In this paper, the current status of heteroepitaxy of CVD diamond is summarized and discussed based on crystallographic considerations.
AB - Epitaxial growth of chemical vapor deposited (CVD) diamond on non-diamond substrates such as c-BN, SiC, BeO, Cu, Ni, and graphite has been the subject of intense effort. It has been confirmed that diamond can be grown epitaxially, ou c-BN single crystals, especially on the boron-terminated surfaces. However, the limitation of the small size of c-BN particles has prevented further development for practical purposes. Recently, highly oriented particles and films have been observed on the {100} planes of β-SiC substrates by the bias-enhanced microwave method. Further, the 〈111〉-oriented particles have been also reported on the {0001} surface of α-SiC which is equivalent in surface structure to the {111} surface of β-SiC. The 〈111〉-oriented particles have been also observed on the {0001} planes of BeO and highly oriented pyrolytic graphite. In this paper, the current status of heteroepitaxy of CVD diamond is summarized and discussed based on crystallographic considerations.
UR - http://www.scopus.com/inward/record.url?scp=0030104387&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030104387&partnerID=8YFLogxK
U2 - 10.1002/pssa.2211540118
DO - 10.1002/pssa.2211540118
M3 - Article
AN - SCOPUS:0030104387
VL - 154
SP - 239
EP - 254
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
ER -