Current status of heteroepitaxy of CVD diamond

T. Suzuki, A. Argoitia

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Epitaxial growth of chemical vapor deposited (CVD) diamond on non-diamond substrates such as c-BN, SiC, BeO, Cu, Ni, and graphite has been the subject of intense effort. It has been confirmed that diamond can be grown epitaxially, ou c-BN single crystals, especially on the boron-terminated surfaces. However, the limitation of the small size of c-BN particles has prevented further development for practical purposes. Recently, highly oriented particles and films have been observed on the {100} planes of β-SiC substrates by the bias-enhanced microwave method. Further, the 〈111〉-oriented particles have been also reported on the {0001} surface of α-SiC which is equivalent in surface structure to the {111} surface of β-SiC. The 〈111〉-oriented particles have been also observed on the {0001} planes of BeO and highly oriented pyrolytic graphite. In this paper, the current status of heteroepitaxy of CVD diamond is summarized and discussed based on crystallographic considerations.

本文言語English
ページ(範囲)239-254
ページ数16
ジャーナルPhysica Status Solidi (A) Applied Research
154
1
DOI
出版ステータスPublished - 1996 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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