TY - JOUR
T1 - Damage-free top-down processes for fabricating two-dimensional arrays of 7nm GaAs nanodiscs using bio-templates and neutral beam etching
AU - Wang, Xuan Yu
AU - Huang, Chi Hsien
AU - Tsukamoto, Rikako
AU - Mortemousque, Pierre Andre
AU - Itoh, Kohei M.
AU - Ohno, Yuzo
AU - Samukawa, Seiji
PY - 2011/9/7
Y1 - 2011/9/7
N2 - The first damage-free top-down fabrication processes for a two-dimensional array of 7nm GaAs nanodiscs was developed by using ferritin (a protein which includes a 7nm diameter iron core) bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the bio-template process, to remove the ferritin protein shell without thermal damage to the GaAs, we firstly developed an oxygen-radical treatment method with a low temperature of 280 °C. Then, the neutral beam etched the defect-free nanodisc structure of the GaAs using the iron core as an etching mask. As a result, a two-dimensional array of GaAs quantum dots with a diameter of ∼ 7nm, a height of ∼ 10nm, a high taper angle of 88° and a quantum dot density of more than 7 × 1011cm- 2 was successfully fabricated without causing any damage to the GaAs.
AB - The first damage-free top-down fabrication processes for a two-dimensional array of 7nm GaAs nanodiscs was developed by using ferritin (a protein which includes a 7nm diameter iron core) bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the bio-template process, to remove the ferritin protein shell without thermal damage to the GaAs, we firstly developed an oxygen-radical treatment method with a low temperature of 280 °C. Then, the neutral beam etched the defect-free nanodisc structure of the GaAs using the iron core as an etching mask. As a result, a two-dimensional array of GaAs quantum dots with a diameter of ∼ 7nm, a height of ∼ 10nm, a high taper angle of 88° and a quantum dot density of more than 7 × 1011cm- 2 was successfully fabricated without causing any damage to the GaAs.
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U2 - 10.1088/0957-4484/22/36/365301
DO - 10.1088/0957-4484/22/36/365301
M3 - Article
C2 - 21836326
AN - SCOPUS:80051697945
SN - 0957-4484
VL - 22
JO - Nanotechnology
JF - Nanotechnology
IS - 36
M1 - 365301
ER -