Defect levels in chromium-doped silicon

Takemitsu Kunio, Tatsuya Yamazaki, Eiji Ohta, Makoto Sakata

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The transient capacitance technique has been used to study the chromium-related levels in the silicon band gap. Chromium was diffused at temperature of 1100 and 1150°C for 0.5 and 3 hr. Five different levels at Ec-0.11 eV, Ec-0.21 eV, Ec-0.28 eV, Ec-0.36 eV and Ec-0.45 eV were obtained from the Arrheniu plots of the electron thermal-emission rates. The number of levels in the upper half of the band gap decreased from five to two with an increase of Cr-diffusion period. Two levels were located at Ec-0.20 eV (donor) and Ec-0.43 eV (acceptor). A donor level was also observed at Ev + 0.25 eV. The donor level was not affected by the diffusion condition. The majority carrier capture cross sections of the three dominant levels have been measured by the transient capacitance technique modified by the pulse transformer. The values were σn = 4.1 × 10-15 cm2 for the upper donor at Ec-0.20 eV, σn = 2.0 × 10-16 cm2 for the acceptor at Ec -0.43 eV and σp = 9.1 × 10-18 cm2 for the lower donor at Ev + 0.25 eV, and were independent of temperature. The three dominant levels are due to distinct chromium centers.

本文言語English
ページ(範囲)155-160
ページ数6
ジャーナルSolid State Electronics
26
2
DOI
出版ステータスPublished - 1983 2
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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