Deionization of Dopants in Silicon Nanofilms even with Donor Concentration of Greater than 1019 cm-3

Takahisa Tanaka, Yuya Kurosawa, Naotoshi Kadotani, Tsunaki Takahashi, Shunri Oda, Ken Uchida

    研究成果: Article

    2 引用 (Scopus)

    抜粋

    Understanding the dopant properties in heavily doped nanoscale semiconductors is essential to design nanoscale devices. We report the deionization or finite ionization energy of dopants in silicon (Si) nanofilms with dopant concentration (ND) of greater than 1019 cm-3, which is in contrast to the zero ionization energy (ED) in bulk Si at the same ND. From the comparison of experimentally observed and theoretically calculated ED, we attribute the deionization to the suppression of metal-insulator transition in highly doped nanoscale semiconductors in addition to the quantum confinement and the dielectric mismatch, which greatly increase ED in low-doped nanoscale semiconductors. Thus, for nanoscale transistors, ND should be higher than that estimated from bulk Si dopant properties in order to reduce their resistivity by the metal-insulator transition.

    元の言語English
    ページ(範囲)1143-1149
    ページ数7
    ジャーナルNano Letters
    16
    発行部数2
    DOI
    出版物ステータスPublished - 2016 2 10

      フィンガープリント

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanical Engineering

    これを引用

    Tanaka, T., Kurosawa, Y., Kadotani, N., Takahashi, T., Oda, S., & Uchida, K. (2016). Deionization of Dopants in Silicon Nanofilms even with Donor Concentration of Greater than 1019 cm-3 Nano Letters, 16(2), 1143-1149. https://doi.org/10.1021/acs.nanolett.5b04406