Delay time component of InGaAs MOSFET caused by dynamic source resistance

Masayuki Yamada, Ken Uchida, Yasuyuki Miyamoto

    研究成果: Article査読

    抄録

    The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (rs), the value of rs is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τs depends on the current in a way similar to rs. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter rs than a Si MOSFET.

    本文言語English
    ページ(範囲)419-422
    ページ数4
    ジャーナルIEICE Transactions on Electronics
    E97-C
    5
    DOI
    出版ステータスPublished - 2014 5月

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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