Demonstration of 1000-times switching of phase-change optical gate with Si wire waveguides

D. Tanaka, Y. Ikuma, Y. Shoji, M. Kuwahara, X. Wang, K. Kintaka, H. Kawashima, T. Toyosaki, H. Tsuda

    研究成果: Article査読

    13 被引用数 (Scopus)

    抄録

    1000-times stable switching operation of an optical gate incorporating a Ge2Sb2Te5 thin film with Si wire waveguides is reported. The phase of the Ge2Sb2Te5 was reversibly changed from the amorphous state to the crystalline state by the application of pulsed laser irradiation. The extinction ratio was 9.7dB on average, and did not decline throughout the entire sequence of 1000 switching events induced by irradiation. The wavelengths of the signal light and of the laser pulses were 1550nm and 660nm, respectively.

    本文言語English
    ページ(範囲)268-269
    ページ数2
    ジャーナルElectronics Letters
    47
    4
    DOI
    出版ステータスPublished - 2011 2 17

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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