Dephasing processes in transport through two-level quantum dot

Y. Funabashi, K. Ohtsubo, Mikio Eto, K. Kawamura

研究成果: Article

1 引用 (Scopus)

抄録

Transport properties through a two-level quantum dot are studied using the Anderson Hamiltonian. Like the spin degeneracy, the orbital degrees of freedom in the quantum dot cause the Kondo effect and dephasing of conduction electrons transported through the dot. One feature of the model is the mixing oforbital states in the dot which occurs even if the Coulomb interaction is absent. This mixing deforms the density of states in the dot and suppresses the increment of the current caused by the Kondo effect. The dephasing processes are enhanced when the bias voltage is increased, but are insensitive to the mixing effect.

元の言語English
ページ(範囲)1367-1371
ページ数5
ジャーナルSolid-State Electronics
42
発行部数7-8
出版物ステータスPublished - 1998 7

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Kondo effect
Semiconductor quantum dots
quantum dots
Hamiltonians
Bias voltage
Coulomb interactions
conduction electrons
Transport properties
degrees of freedom
transport properties
orbitals
Electrons
causes
electric potential
interactions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Funabashi, Y., Ohtsubo, K., Eto, M., & Kawamura, K. (1998). Dephasing processes in transport through two-level quantum dot. Solid-State Electronics, 42(7-8), 1367-1371.

Dephasing processes in transport through two-level quantum dot. / Funabashi, Y.; Ohtsubo, K.; Eto, Mikio; Kawamura, K.

:: Solid-State Electronics, 巻 42, 番号 7-8, 07.1998, p. 1367-1371.

研究成果: Article

Funabashi, Y, Ohtsubo, K, Eto, M & Kawamura, K 1998, 'Dephasing processes in transport through two-level quantum dot', Solid-State Electronics, 巻. 42, 番号 7-8, pp. 1367-1371.
Funabashi Y, Ohtsubo K, Eto M, Kawamura K. Dephasing processes in transport through two-level quantum dot. Solid-State Electronics. 1998 7;42(7-8):1367-1371.
Funabashi, Y. ; Ohtsubo, K. ; Eto, Mikio ; Kawamura, K. / Dephasing processes in transport through two-level quantum dot. :: Solid-State Electronics. 1998 ; 巻 42, 番号 7-8. pp. 1367-1371.
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