Deposition of fluoropolymer thin films containing semiconductor microcrystallites by VUV laser ablation

T. Fujii; S. Inoue; F. Kannari

doi:10.1016/0169-4332(95)00556-0

Deposition of fluoropolymer thin films containing semiconductor microcrystallites by VUV laser ablation

T. Fujii, S. Inoue, F. Kannari

研究成果: Article › 査読

4 被引用数 (Scopus)

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Combining deposition of crystalline thin films of polytetrafluoroethylene (PTFE) via F ₂ laser (157 nm) ablation with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe is maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy region and a third-order optical nonlinearity, which are induced by the quantum size effect.

本文言語	English
ページ（範囲）	621-624
ページ数	4
ジャーナル	Applied Surface Science
巻	96-98
DOI	https://doi.org/10.1016/0169-4332(95)00556-0
出版ステータス	Published - 1996 4月

ASJC Scopus subject areas

化学 (全般)
凝縮系物理学
物理学および天文学（全般）
表面および界面
表面、皮膜および薄膜

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10.1016/0169-4332(95)00556-0

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title = "Deposition of fluoropolymer thin films containing semiconductor microcrystallites by VUV laser ablation",

abstract = " Combining deposition of crystalline thin films of polytetrafluoroethylene (PTFE) via F 2 laser (157 nm) ablation with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe is maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy region and a third-order optical nonlinearity, which are induced by the quantum size effect. ",

author = "T. Fujii and S. Inoue and F. Kannari",

year = "1996",

month = apr,

doi = "10.1016/0169-4332(95)00556-0",

language = "English",

volume = "96-98",

pages = "621--624",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

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TY - JOUR

T1 - Deposition of fluoropolymer thin films containing semiconductor microcrystallites by VUV laser ablation

AU - Fujii, T.

AU - Inoue, S.

AU - Kannari, F.

PY - 1996/4

Y1 - 1996/4

N2 - Combining deposition of crystalline thin films of polytetrafluoroethylene (PTFE) via F 2 laser (157 nm) ablation with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe is maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy region and a third-order optical nonlinearity, which are induced by the quantum size effect.

AB - Combining deposition of crystalline thin films of polytetrafluoroethylene (PTFE) via F 2 laser (157 nm) ablation with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe is maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy region and a third-order optical nonlinearity, which are induced by the quantum size effect.

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U2 - 10.1016/0169-4332(95)00556-0

DO - 10.1016/0169-4332(95)00556-0

M3 - Article

AN - SCOPUS:0030563099

VL - 96-98

SP - 621

EP - 624

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

Deposition of fluoropolymer thin films containing semiconductor microcrystallites by VUV laser ablation

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ASJC Scopus subject areas

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