Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Y. Shimizu, Y. Kawamura, M. Uematsu, M. Tomita, T. Kinno, N. Okada, M. Kato, H. Uchida, M. Takahashi, H. Ito, H. Ishikawa, Y. Ohji, H. Takamizawa, Y. Nagai, K. M. Itoh

研究成果: Article査読

35 被引用数 (Scopus)

抄録

We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick 28Si- and 30Si-enriched layers were measured to reconstruct three-dimensional images of 28Si and 30Si stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.

本文言語English
論文番号036102
ジャーナルJournal of Applied Physics
109
3
DOI
出版ステータスPublished - 2011 2 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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