Design optimization of NEMS switches for suspended-gate single-electron transistor applications

Benjamin Pruvost, Ken Uchida, Hiroshi Mizuta, Shunri Oda

    研究成果: Article

    15 引用 (Scopus)

    抜粋

    The operation of nanoelectromechanical switches is investigated through simulation. A simple methodology based on a 1-D lumped model taking account of the Casimir effect is first proposed to determine a low-voltage actuation window for conventional cantilevers. Results show good agreement with 3-D simulation and prove to be helpful for systematic design. The conventional cantilever shape is then optimized to a cross-like design that is fully studied in a 3-D environment. Static and dynamic behaviors as well as effect of the oxide layer thickness are investigated with a view to suspended-gate single-electron transistor applications. The proposed structure successfully combines low actuation voltage and low power consumption, and it is shown that the switching speed is the limiting factor for the considered applications.

    元の言語English
    記事番号4711095
    ページ(範囲)174-184
    ページ数11
    ジャーナルIEEE Transactions on Nanotechnology
    8
    発行部数2
    DOI
    出版物ステータスPublished - 2009 3 1

    ASJC Scopus subject areas

    • Computer Science Applications
    • Electrical and Electronic Engineering

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