Diameter dependence of scattering limited transport properties of Si nanowire MOSFETs under uniaxial tensile strain

Takahisa Tanaka, Kohei M. Itoh

研究成果: Conference contribution

抄録

Effects of the diameter on the drain current of uniaxially strained Si nanowire (NW) MOSFETs are investigated. Based on the deterministic solution of the multi-subband Boltzmann transport equation, the drain current is calculated considering the intravalley acoustic phonon scatterings, intervalley phonon scatterings and interface roughness scatterings. We found 3 nm diameter [110] oriented Si NW MOSFETs shows ∼2X drain current enhancement by the 1% uniaxial tensile strain.

本文言語English
ホスト出版物のタイトルInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
出版社Institute of Electrical and Electronics Engineers Inc.
ページ229-232
ページ数4
ISBN(電子版)9781479952885
DOI
出版ステータスPublished - 2014 10月 20
イベント2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014 - Yokohama, Japan
継続期間: 2014 9月 92014 9月 11

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014
国/地域Japan
CityYokohama
Period14/9/914/9/11

ASJC Scopus subject areas

  • 電子工学および電気工学
  • コンピュータ サイエンスの応用
  • モデリングとシミュレーション

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