Dielectric Relaxation and Charge Transfer in Amorphous MoS2 Thin Films

Aleksei A. Kononov, Rene A. Castro, Diana D. Glavnaya, Nadezhda I. Anisimova, Gennady A. Bordovsky, Alexander V. Kolobov, Yuta Saito, Paul Fons

研究成果: Article査読

抄録

The results of a study on dielectric relaxation and charge transfer in thin layers of amorphous MoS2 using dielectric spectroscopy are presented. Both dipole-relaxation polarization and hopping charge transfer have been observed. The activation energies of the relaxation process Ea and conductivity Eσ have been calculated and found to be approximately equal; therefore, it is assumed that the two processes are based on the same underlying charge transfer mechanism.

本文言語English
論文番号2000114
ジャーナルPhysica Status Solidi (B) Basic Research
257
11
DOI
出版ステータスPublished - 2020 11
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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