Direct diameter-controlled growth of multiwall carbon nanotubes on nickel-suicide layer

Mizuhisa Nihei, Akio Kawabata, Yuji Awano

研究成果: Article査読

74 被引用数 (Scopus)

抄録

By using plasma-enhanced chemical vapor deposition (p-CVD), we grew vertically aligned multiwall carbon nanotubes (CNTs) directly on a nickel-suicide layer, which can be used as electrodes for metal-oxide-semiconductor field-effect transistors (MOSFETs). By using a nickel-suicide layer as a catalyst, the nanotube diameter became smaller than that possible with a nickel film catalyst. We suggest that Ni-silicide composition plays an important role in controlling the diameter of the nanotubes. To our knowledge, this is the first report on diameter-controlled vertically aligned CNT growth on catalytic metal-silicide substrates.

本文言語English
ページ(範囲)L721-L723
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
6 B
出版ステータスPublished - 2003 6 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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