Direct evaluation of self-heating effects in bulk and ultra-thin BOX SOI MOSFETs using four-terminal gate resistance technique

Tsunaki Takahashi, Takeo Matsuki, Takahiro Shinada, Yasuo Inoue, Ken Uchida

    研究成果: Article査読

    13 被引用数 (Scopus)

    抄録

    We demonstrate clear self-heating effects (SHEs) of bulk and silicon-on-insulator (SOI) MOSFETs for various SOI/buried oxide (BOX) thicknesses including ultra-thin 6 nm BOX, which was not detected by the ac conductance method, using the four-terminal gate resistance technique. We clarify that the SHE in bulk MOSFETs originates from the degradation of thermal conductivity in a heavily doped well region. The strong chip-temperature dependence of the SHE was observed only in bulk MOSFETs. As results of the chip temperature-dependent SHE of bulk devices and the SHE suppression by BOX thinning, the device temperature of ultra-thin BOX SOI MOSFETs is close to that of bulk MOSFETs at an elevated chip temperature, which suggests the thermal advantage of extremely thin BOX structures.

    本文言語English
    論文番号7469833
    ページ(範囲)365-373
    ページ数9
    ジャーナルIEEE Journal of the Electron Devices Society
    4
    5
    DOI
    出版ステータスPublished - 2016 9月

    ASJC Scopus subject areas

    • バイオテクノロジー
    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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