Direct-gap photoluminescence from germanium nanowires

Yoko Kawamura; Kevin C.Y. Huang; Shruti V. Thombare; Shu Hu; Marika Gunji; Toyofumi Ishikawa; Mark L. Brongersma; Kohei M. Itoh; Paul C. McIntyre

doi:10.1103/PhysRevB.86.035306

Direct-gap photoluminescence from germanium nanowires

Yoko Kawamura, Kevin C.Y. Huang, Shruti V. Thombare, Shu Hu, Marika Gunji, Toyofumi Ishikawa, Mark L. Brongersma, Kohei M. Itoh, Paul C. McIntyre

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研究成果: Article › 査読

16 被引用数 (Scopus)

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We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an approximately quadratic dependence on excitation laser power and decreases with decreasing temperature. The peak position exhibits a redshift with increasing laser power due to laser-induced heating of the wires. These observations indicate that the photoluminescence originates from the direct band-gap recombination in the germanium nanowires.

本文言語	English
論文番号	035306
ジャーナル	Physical Review B - Condensed Matter and Materials Physics
巻	86
号	3
DOI	https://doi.org/10.1103/PhysRevB.86.035306
出版ステータス	Published - 2012 7月 6

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

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10.1103/PhysRevB.86.035306

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title = "Direct-gap photoluminescence from germanium nanowires",

abstract = "We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an approximately quadratic dependence on excitation laser power and decreases with decreasing temperature. The peak position exhibits a redshift with increasing laser power due to laser-induced heating of the wires. These observations indicate that the photoluminescence originates from the direct band-gap recombination in the germanium nanowires.",

author = "Yoko Kawamura and Huang, {Kevin C.Y.} and Thombare, {Shruti V.} and Shu Hu and Marika Gunji and Toyofumi Ishikawa and Brongersma, {Mark L.} and Itoh, {Kohei M.} and McIntyre, {Paul C.}",

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AU - Kawamura, Yoko

AU - Huang, Kevin C.Y.

AU - Thombare, Shruti V.

AU - Hu, Shu

AU - Gunji, Marika

AU - Ishikawa, Toyofumi

AU - Brongersma, Mark L.

AU - Itoh, Kohei M.

AU - McIntyre, Paul C.

PY - 2012/7/6

Y1 - 2012/7/6

N2 - We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an approximately quadratic dependence on excitation laser power and decreases with decreasing temperature. The peak position exhibits a redshift with increasing laser power due to laser-induced heating of the wires. These observations indicate that the photoluminescence originates from the direct band-gap recombination in the germanium nanowires.

AB - We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an approximately quadratic dependence on excitation laser power and decreases with decreasing temperature. The peak position exhibits a redshift with increasing laser power due to laser-induced heating of the wires. These observations indicate that the photoluminescence originates from the direct band-gap recombination in the germanium nanowires.

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Direct-gap photoluminescence from germanium nanowires

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