Direct-gap photoluminescence from germanium nanowires

Yoko Kawamura, Kevin C.Y. Huang, Shruti V. Thombare, Shu Hu, Marika Gunji, Toyofumi Ishikawa, Mark L. Brongersma, Kohei M. Itoh, Paul C. McIntyre

研究成果: Article査読

15 被引用数 (Scopus)

抄録

We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an approximately quadratic dependence on excitation laser power and decreases with decreasing temperature. The peak position exhibits a redshift with increasing laser power due to laser-induced heating of the wires. These observations indicate that the photoluminescence originates from the direct band-gap recombination in the germanium nanowires.

本文言語English
論文番号035306
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
86
3
DOI
出版ステータスPublished - 2012 7 6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

フィンガープリント 「Direct-gap photoluminescence from germanium nanowires」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル