Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO

P. Fons, H. Tampo, A. V. Kolobov, M. Ohkubo, S. Niki, J. Tominaga, R. Carboni, S. Friedrich

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

ZnO is a wide band gap, naturally n-type semiconductor with great promise for optoelectronic applications. To date, however, it has proven difficult to dope p-type, a prerequisite for device fabrication. Nitrogen is widely believed to be one of the most promising dopant candidates, however, experimental results to date have been inconsistent; recent theoretical formation energy calculations have indicated that Nitrogen preferentially incorporates into the ZnO lattice in the form of a N2- molecule at an O-site when a Nitrogen plasma source is used, leading to compensation rather than p-type doping. We show by a combination of X-ray absorption spectroscopy at the N K-edge of plasma-assisted molecular beam epitaxy grown ZnO and ab-initio simulations that in as-grown material, Nitrogen incorporates substitutionally on an O-site where it is expected to act as an acceptor. We have also observed the distinctive formation of molecular nitrogen bubbles upon rapid thermal annealing. These results suggest that effective p-type doping of ZnO with N may only be possible for metastable low-temperature growth processes.

本文言語English
ホスト出版物のタイトルX-RAY ABSORPTION FINE STRUCTURE - XAFS13
ホスト出版物のサブタイトル13th International Conference
ページ381-383
ページ数3
DOI
出版ステータスPublished - 2007
イベントX-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference - Stanford, CA, United States
継続期間: 2006 7 92006 7 14

出版物シリーズ

名前AIP Conference Proceedings
882
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Conference

ConferenceX-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference
CountryUnited States
CityStanford, CA
Period06/7/906/7/14

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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