Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility

Tsunaki Takahashi, Gento Yamahata, Jun Ogi, Tetsuo Kodera, Shunri Oda, Ken Uchida

    研究成果: Conference contribution

    1 被引用数 (Scopus)

    抄録

    The band structures and carrier transport in (110) pFETs are thoroughly studied over a wide temperature range under high magnetic fields. In (110) pFETs, the degenerate hole bands in bulk Si are separated into the higher energy band (H band) and the lower energy band (L band). The energy difference between these bands is experimentally evaluated. The effective masses of each band are directly obtained from the Shubnikov-de Haas (SdH) oscillation analysis. It is demonstrated that mobility in the higher energy band is worse than that in the lower energy band, resulting in sharp mobility drop at higher surface carrier concentrations (Ns) and a clear hump in Id-Vg characteristics at low temperatures of less than 20 K. In order to further enhance mobility in (110) pFETs, the increase in the energy split between H and L bands is important.

    本文言語English
    ホスト出版物のタイトル2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
    ページ19.7.1-19.7.4
    DOI
    出版ステータスPublished - 2009 12 1
    イベント2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
    継続期間: 2009 12 72009 12 9

    出版物シリーズ

    名前Technical Digest - International Electron Devices Meeting, IEDM
    ISSN(印刷版)0163-1918

    Other

    Other2009 International Electron Devices Meeting, IEDM 2009
    CountryUnited States
    CityBaltimore, MD
    Period09/12/709/12/9

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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