Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope

K. Matsuda, T. Matsumoto, H. Saito, K. Nishi, T. Saiki

研究成果: Conference article › 査読

1 被引用数 (Scopus)

抄録

We study the variations of optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) in the spatial and time domains by combining a near-field scanning optical microscope with an ultrafast pulsed laser. Through the examinations of several tens of QDs, we find that the variations of photoluminescence (PL) intensity strongly depend on the condition of the initial carrier creation. The differences in quantum efficiency and those in the carrier flow rate into QDs cause the large distribution of PL intensity when the carriers are excited in the barrier layers. From the results of time-resolved PL decay measurements, we find that there are two types of QDs exhibiting quite different PL decay profiles.

本文言語English
ページ（範囲）377-382
ページ数6
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
巻7
号3
DOI
出版ステータスPublished - 2000 5月
外部発表はい
イベントMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
継続期間: 1999 7月 12 → 1999 7月 16

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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