Direct optical observation of compositional fluctuation in GaAs 1-xNx by near-field photoluminescence spectroscopy and microscopy with high spatial resolution

K. Matsuda, T. Saiki, T. Yamada, T. Ishizuka

研究成果: Article査読

12 被引用数 (Scopus)

抄録

We describe imaging spectroscopy of GaAS1-xNx/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs1-xNx/GaAs(0=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1-xNx with a higher N concentration (x = 1.2%).

本文言語English
ページ(範囲)3077-3079
ページ数3
ジャーナルApplied Physics Letters
85
15
DOI
出版ステータスPublished - 2004 10 11

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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