Directional current switch using silicon single electron transistors controlled by charge injection into silicon nano-crystal floating dots

Nobuyoshi Takahashi, Hiroki Ishikuro, Toshiro Hiramoto

研究成果: Conference article査読

14 被引用数 (Scopus)

抄録

A directional current switch is fabricated using two single electron transistors (SETs) with a common gate electrode. In order to adjust the peak positions of Coulomb blockade oscillations, SETs with Si nano-crystal floating dots are utilized. The phases of two SETs are separately controlled using only one gate electrode and the operation of current switch is successfully demonstrated. This method for the phase control in SETs is very important for practical integration of SETs.

本文言語English
ページ(範囲)371-374
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1999 12 1
外部発表はい
イベント1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
継続期間: 1999 12 51999 12 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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