Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

A. Bocheux; I. C. Robin; J. Bonaimé; B. Hyot; A. V. Kolobov; K. V. Mitrofanov; P. Fons; J. Tominaga; Y. Tamenori; G. Feuillet

doi:10.1063/1.4876228

Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

A. Bocheux, I. C. Robin, J. Bonaimé, B. Hyot, A. V. Kolobov, K. V. Mitrofanov, P. Fons, J. Tominaga, Y. Tamenori, G. Feuillet

研究成果: Article › 査読

1 被引用数 (Scopus)

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In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

本文言語	English
論文番号	194302
ジャーナル	Journal of Applied Physics
巻	115
号	19
DOI	https://doi.org/10.1063/1.4876228
出版ステータス	Published - 2014 5月 21
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1063/1.4876228

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AU - Bocheux, A.

AU - Robin, I. C.

AU - Bonaimé, J.

AU - Hyot, B.

AU - Kolobov, A. V.

AU - Mitrofanov, K. V.

AU - Fons, P.

AU - Tominaga, J.

AU - Tamenori, Y.

AU - Feuillet, G.

PY - 2014/5/21

Y1 - 2014/5/21

N2 - In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

AB - In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

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VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 19

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ER -

Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

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