Dose dependence of recrystallization behavior in germanium-ion-implanted polycrystalline silicon films

Myeon Koo Kang, Takuro Yamaguchi, Hiroshi Kuwano

研究成果: Article

3 引用 (Scopus)

抄録

Recrystallization behavior in polycrystalline silicon (poly-Si) films amorphized by germanium ion (Ge+) implantation on a SÍO2 layer is investigated. The nucléation rate decreases as the Ge+ dose increases, which is strongly related to the increase in the disordered states in as-implanted amorphous Si films. The growth rate first increases and then decreases as the Ge+ dose increases, which can be explained by the strain effect induced by Ge atoms. The grain size of recrystallized poly-Si films increases as the Ge+ dose increases. The optimum implantation dose to achieve good crystallinity is found to be 1 X 1015 ions/cm2.

元の言語English
ページ(範囲)L803-L805
ジャーナルJapanese journal of applied physics
34
発行部数7
DOI
出版物ステータスPublished - 1995 1 1

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silicon films
Germanium
Polysilicon
germanium
dosage
Ions
ions
Ion implantation
ion implantation
crystallinity
implantation
Atoms
grain size
atoms

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Dose dependence of recrystallization behavior in germanium-ion-implanted polycrystalline silicon films. / Kang, Myeon Koo; Yamaguchi, Takuro; Kuwano, Hiroshi.

:: Japanese journal of applied physics, 巻 34, 番号 7, 01.01.1995, p. L803-L805.

研究成果: Article

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