Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition

Yoko Takezawa, Minoru Ryu, Yoshiki Iwazaki, Toshimasa Suzuki, Youichi Mizuno, Hiroaki Imai

研究成果: Conference contribution

1 引用 (Scopus)

抄録

Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al 2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.

元の言語English
ホスト出版物のタイトルKey Engineering Materials
ページ277-280
ページ数4
566
DOI
出版物ステータスPublished - 2013
イベント31st Electronics Division Meeting of the Ceramic Society of Japan - Tokyo, Japan
継続期間: 2011 10 282011 10 29

出版物シリーズ

名前Key Engineering Materials
566
ISSN(印刷物)10139826

Other

Other31st Electronics Division Meeting of the Ceramic Society of Japan
Japan
Tokyo
期間11/10/2811/10/29

Fingerprint

Boron
Dielectric properties
Nanocrystals
Thin films
Microstructure
Grain growth
Permittivity
Sintering
Particle size
Nanoparticles
Substrates
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Takezawa, Y., Ryu, M., Iwazaki, Y., Suzuki, T., Mizuno, Y., & Imai, H. (2013). Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition. : Key Engineering Materials (巻 566, pp. 277-280). (Key Engineering Materials; 巻数 566). https://doi.org/10.4028/www.scientific.net/KEM.566.277

Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition. / Takezawa, Yoko; Ryu, Minoru; Iwazaki, Yoshiki; Suzuki, Toshimasa; Mizuno, Youichi; Imai, Hiroaki.

Key Engineering Materials. 巻 566 2013. p. 277-280 (Key Engineering Materials; 巻 566).

研究成果: Conference contribution

Takezawa, Y, Ryu, M, Iwazaki, Y, Suzuki, T, Mizuno, Y & Imai, H 2013, Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition. : Key Engineering Materials. 巻. 566, Key Engineering Materials, 巻. 566, pp. 277-280, 31st Electronics Division Meeting of the Ceramic Society of Japan, Tokyo, Japan, 11/10/28. https://doi.org/10.4028/www.scientific.net/KEM.566.277
Takezawa Y, Ryu M, Iwazaki Y, Suzuki T, Mizuno Y, Imai H. Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition. : Key Engineering Materials. 巻 566. 2013. p. 277-280. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.566.277
Takezawa, Yoko ; Ryu, Minoru ; Iwazaki, Yoshiki ; Suzuki, Toshimasa ; Mizuno, Youichi ; Imai, Hiroaki. / Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition. Key Engineering Materials. 巻 566 2013. pp. 277-280 (Key Engineering Materials).
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