Effect of aspect ratio on topographic dependent charging in oxide etching

J. Matsui, K. Maeshige, T. Makabe

研究成果: Article査読

40 被引用数 (Scopus)

抄録

Consideration is given to a wall conductance inside a trench in SiO2 exposed by plasma etching in order to predict the wall surface charging as a function of the aspect ratio. With a lack of surface conductance, physical and electrical etch stops occur in SiO2 trench etching at high aspect ratios due to the difference of the velocity distribution between the electrons and the positive ions incident on the wafer. The sensitivity to the aspect ratio of the bottom charging potential decreases with the increasing surface electron conductance. The wall potential in the trench exposed to plasma etching in a pulsed operation is simulated in a simplified manner, and is predicted to be decreased by massive negative ions instead of electrons in the off-phase.

本文言語English
ページ(範囲)2950-2955
ページ数6
ジャーナルJournal of Physics D: Applied Physics
34
19
DOI
出版ステータスPublished - 2001 10 7

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

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