Effect of double-layered sio2-si3n4 films on formation of stacking fault-free region in silicon

Kazuhiko Kakishita, Akihiko Otani, Eiji Ohta, Makoto Sakata

研究成果: Article査読

抄録

We have studied the effect of surface conditions on the formation of a stacking fault-free region. The specimens with and without double-layered SiO2-Si3N4 films were heat-treated at 750°C for 64 h and then annealed in vacuum at 1050-1150°C for 0.5–128 h. In the specimens with double-layered films, a stacking fault-free region was formed beneath the Si-SiO2 interface, while it was formed beneath the surface in the bare specimens. Its thickness increased depending on the annealing time, t0.6±0.1. The thickness of the stacking fault-free region in the bare specimens was two to three times wider than that in the specimens with double-layered films. This difference can be explained using a model in which the Si-SiO2 interface acts as a sink of self-interstitials and the bare surface acts as not only a sink of self-interstitials, but also as a source of vacancies.

本文言語English
ページ(範囲)1147-1153
ページ数7
ジャーナルJapanese journal of applied physics
28
7 R
DOI
出版ステータスPublished - 1989 7月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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