抄録
Production and transport processes of the H0 atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under a Cs-seeded condition to obtain a spatial distribution of surface-produced H- ions. In this analysis, we focus on the effect of the energy relaxation of the H0 atoms at the wall on the H- ion production from the H0 atoms. The result indicates that, by considering the energy relaxation of the H0 atoms at the wall, the production profile of the surface-produced H- ion is well reflected in the production profile of the H0 atom production.
本文言語 | English |
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論文番号 | 02A503 |
ジャーナル | Review of Scientific Instruments |
巻 | 79 |
号 | 2 |
DOI | |
出版ステータス | Published - 2008 |
ASJC Scopus subject areas
- 器械工学