Effect of energy relaxation of H0 atoms at the wall on the production profile of H- ions in large negative ion sources

N. Takado, D. Matsushita, I. Fujino, A. Hatayama, H. Tobari, T. Inoue

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Production and transport processes of the H0 atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under a Cs-seeded condition to obtain a spatial distribution of surface-produced H- ions. In this analysis, we focus on the effect of the energy relaxation of the H0 atoms at the wall on the H- ion production from the H0 atoms. The result indicates that, by considering the energy relaxation of the H0 atoms at the wall, the production profile of the surface-produced H- ion is well reflected in the production profile of the H0 atom production.

本文言語English
論文番号02A503
ジャーナルReview of Scientific Instruments
79
2
DOI
出版ステータスPublished - 2008

ASJC Scopus subject areas

  • 器械工学

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