Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon

Ryotaro Kiga, Masashi Uematsu, Kohei M. Itoh

研究成果: Article査読

抄録

The effect of fluorine (F) on diffusion of boron (B) in silicon (Si) is investigated by secondary ion mass spectrometry of Si, B, and F diffusion using pre-amorphized natSi/28Si isotope multilayers that are co-implanted with B and F. By the presence of F, diffusion of B is suppressed while that of Si is enhanced. A quantitative analysis of the experimental results based on our diffusion model shows that the suppression of B diffusion is due to (1) Si interstitial undersaturation caused by the time-dependent formation and dissolution of F-vacancy (FV) clusters and (2) direct interaction between B and FV clusters. The model developed in this study enables an accurate simulation of B and Si diffusion in the presence of F in Si.

本文言語English
論文番号105701-1
ジャーナルJournal of Applied Physics
128
10
DOI
出版ステータスPublished - 2020 9月 14

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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