Effect of indium substitution on the thermoelectric properties of orthorhombic Cu4SnS4

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We report the thermoelectric properties of Cu4In x Sn1-x S4 (x = 0-0.02), which undergoes a first-order structural phase transition at ∼230 K. Substitution of In3+ for Sn4+ suppresses the phase transition temperature (T t). Indium substitution reduces the electrical resistivity, and degenerate conduction by the orthorhombic phase is observed. The Seebeck coefficient increases over the whole temperature range and a maximum value occurs in the monoclinic phase as a result of indium substitution. Thermal conductivity decreases as x increases, which enhances the dimensionless figure of merit, ZT. We therefore expect optimization of the chemical composition of indium-doped Cu4SnS4 to result in an even larger ZT value.

本文言語English
ページ(範囲)2202-2205
ページ数4
ジャーナルJournal of Electronic Materials
43
6
DOI
出版ステータスPublished - 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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