Effect of metal side claddings on emission decay rates of single quantum dots embedded in a sub-wavelength semiconductor waveguide

Takumi Yamamoto, Yasutomo Ota, Satomi Ishida, Naoto Kumagai, Satoshi Iwamoto, Yasuhiko Arakawa

研究成果: Article査読

抄録

We experimentally investigate the emission decay rates of self-assembled single InAs quantum dots (QDs) embedded in sub-wavelength semiconductor waveguides with and without metal side claddings. Compared with as-grown single QDs, we observe a clear suppression (enhancement) in the radiative decay rates of single InAs QDs embedded in the sub-wavelength semiconductor waveguides without (with) metal cladding, respectively. The decay rate for QDs in metal-clad waveguides is >2 times faster than that in waveguides without metal. Numerical calculations using models that include the effects of structural imperfections show good agreement with the experimental results, and reveal that the most important structural imperfection is the gap between the metal and the semiconductor.

本文言語English
論文番号08RC02
ジャーナルJapanese journal of applied physics
55
8
DOI
出版ステータスPublished - 2016 8月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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