抄録
The effect of surface roughness at the nanoscale on direct-wafer bond quality was investigated. The bond quality was evaluated by measurement of the effective bonding energy. It was shown that the experimental results revealed a clear correlation between the bonding energy and the bearing ratio. It was found that a bearing depth of ∼1.4 nm is appropriate for the characterization of direct-bonded silicon at room temperature.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 6800-6806 |
| ページ数 | 7 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 94 |
| 号 | 10 |
| DOI | |
| 出版ステータス | Published - 2003 11月 15 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（全般）