Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

N. Miki, S. M. Spearing

研究成果: Article査読

61 被引用数 (Scopus)

抄録

The effect of surface roughness at the nanoscale on direct-wafer bond quality was investigated. The bond quality was evaluated by measurement of the effective bonding energy. It was shown that the experimental results revealed a clear correlation between the bonding energy and the bearing ratio. It was found that a bearing depth of ∼1.4 nm is appropriate for the characterization of direct-bonded silicon at room temperature.

本文言語English
ページ(範囲)6800-6806
ページ数7
ジャーナルJournal of Applied Physics
94
10
DOI
出版ステータスPublished - 2003 11 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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