Silicon self-diffusion and boron diffusion in SiO 2 were investigated as functions of the distance of diffusing silicon from the Si/SiO 2 interface at various temperatures in the range of 1150-1250°C using natSiO 2/ 28SiO 2 isotope heterostructures and 30Si- and B-implanted 28SiO 2 without and with a 30-nm-thick silicon nitride layer on the surface of each sample. The self-diffusivity of Si in SiO 2 did not depend on the oxygen concentration in the annealing ambient without the silicon nitride layer. The diffusion profiles of Si and B in the sample capped with the silicon nitride layer became broader as the distance from the Si/SiO 2 interface decreased. This dependence on the distance from the interface was caused by SiO molecules, which are generated at the interface and diffuse into SiO 2. The simulated results, taking into account the role of SiO molecules, showed good agreement with each experimental profile of 30Si and B.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2004 11月|
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