抄録
We present evidence for anomalously large, strain-dependent interdiffusion in InAs1-xPx layers grown on InP(001) substrates by organometallic vapor phase epitaxy at 620 °C. Specifically, there are strong indications for the existence of a "critical strain:" if the strain is ∼1.9% or more, much P-As mixing occurs, but for smaller strain the mixing is greatly decreased. The interdiffusion is also highly sensitive to temperature. A set of samples grown at 580 °C exhibits a factor of ∼2 decrease in P-As mixing compared to a set grown at 620 °C.
本文言語 | English |
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ページ(範囲) | 3410-3412 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 70 |
号 | 25 |
DOI | |
出版ステータス | Published - 1997 6月 23 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)