Effect of strain and temperature on anomalously large interdiffusion in InAsP/lnP heterostructures

D. J. Tweet, H. Matsuhata, P. Fons, H. Oyanagi, H. Kamei

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We present evidence for anomalously large, strain-dependent interdiffusion in InAs1-xPx layers grown on InP(001) substrates by organometallic vapor phase epitaxy at 620 °C. Specifically, there are strong indications for the existence of a "critical strain:" if the strain is ∼1.9% or more, much P-As mixing occurs, but for smaller strain the mixing is greatly decreased. The interdiffusion is also highly sensitive to temperature. A set of samples grown at 580 °C exhibits a factor of ∼2 decrease in P-As mixing compared to a set grown at 620 °C.

本文言語English
ページ(範囲)3410-3412
ページ数3
ジャーナルApplied Physics Letters
70
25
DOI
出版ステータスPublished - 1997 6月 23
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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