Effect of substrate temperature on hardness and transparency of SiOC(-H) thin films synthesized by atmospheric pressure plasma enhanced CVD method

Mayui Noborisaka, So Nagashima, Hidetaka Hayashi, Naoharu Ueda, Kyoko Kumagai, Akira Shirakura, Tetsuya Suzuki

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

Silicon-based films have gained much interest as protective coatings for transparent polymeric materials. In this study, SiOC(-H) thin films were deposited on polycarbonate (PC) or Si substrates from trimethylsilane (TrMS) gas diluted with He gas by atmospheric pressure plasma enhanced CVD (AP-PECVD) method with varying substrate temperature, and transparency and hardness of the films were investigated. The films exhibited a good optical transparency with an optical transmittance of about 90% irrespective of the substrate temperature, and the hardness increased from 0.6 to 1.3 GPa as the substrate temperature increased from 60 to 140°C. The results are discussed in terms of chemical structural changes in the films according to the substrate temperature.

元の言語English
ホスト出版物のタイトルAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
ページ217-222
ページ数6
DOI
出版物ステータスPublished - 2012 1 1
イベント2011 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2011 4 252011 4 29

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1321
ISSN(印刷物)0272-9172

Other

Other2011 MRS Spring Meeting
United States
San Francisco, CA
期間11/4/2511/4/29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • これを引用

    Noborisaka, M., Nagashima, S., Hayashi, H., Ueda, N., Kumagai, K., Shirakura, A., & Suzuki, T. (2012). Effect of substrate temperature on hardness and transparency of SiOC(-H) thin films synthesized by atmospheric pressure plasma enhanced CVD method. : Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011 (pp. 217-222). (Materials Research Society Symposium Proceedings; 巻数 1321). https://doi.org/10.1557/opl.2011.1191