Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Shigeto Fukatsu; Tomonori Takahashi; Kohei M. Itoh; Masashi Uematsu; Akira Fujiwara; Hiroyuki Kageshima; Yasuo Takahashi; Kenji Shiraishi; Ulrich Gösele

doi:10.1063/1.1625775

Effect of the Si/SiO₂ interface on self-diffusion of Si in semiconductor-grade SiO₂

Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi, Ulrich Gösele

物理情報工学科

研究成果: Article › 査読

65 被引用数 (Scopus)

抄録

The influence of Si/SiO₂ interface on Si self-diffusion in SiO₂ was analyzed. For protecting the SiO₂ layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO₂ thickness. The results show that the Si species diffusing into SiO₂, emitted at the Si/SiO₂ have a strong influence on the self-diffusivity of Si in SiO₂.

本文言語	English
ページ（範囲）	3897-3899
ページ数	3
ジャーナル	Applied Physics Letters
巻	83
号	19
DOI	https://doi.org/10.1063/1.1625775
出版ステータス	Published - 2003 11月 10

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.1625775

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引用スタイル

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AU - Fujiwara, Akira

AU - Kageshima, Hiroyuki

AU - Takahashi, Yasuo

AU - Shiraishi, Kenji

AU - Gösele, Ulrich

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