Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi, Ulrich Gösele

研究成果: Article査読

65 被引用数 (Scopus)

抄録

The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.

本文言語English
ページ(範囲)3897-3899
ページ数3
ジャーナルApplied Physics Letters
83
19
DOI
出版ステータスPublished - 2003 11月 10

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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