Effects of air annealing on CuInSe2 thin films grown by molecular beam epitaxy

I. Kim, S. Niki, P. J. Fons, T. Kurafuji, M. Okutomi, A. Yamada

研究成果: Conference article査読

抄録

High quality epitaxial CuInSe2 (CIS) films with a range of Cu/In ratios (γ) = 0.80 to approximately 2.24 grown by molecular beam epitaxy (MBE) have been post-annealed at temperatures of TA = 200 to approximately 400 °C in both dry-air and Ar atmospheres. Changes in the structure and composition due to annealing have been investigated. The only oxide observed experimentally for both the In-rich, and the Cu-rich CIS films was In2O3. This is consistent with equilibrium thermodynamic calculations which indicate that In2O3 is the most stable solid oxide phase. During annealing some reactions are probably kinetically limited making the annealing process a function of time and temperature, but the equilibrium thermodynamic results reported here simplify interpretation of phase space.

本文言語English
ページ(範囲)261-266
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
426
出版ステータスPublished - 1996
外部発表はい
イベントProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
継続期間: 1996 4 81996 4 12

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Effects of air annealing on CuInSe<sub>2</sub> thin films grown by molecular beam epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル